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2 μn InAsSb quantum-dot lasers

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dc.contributor.author Qiu, Yueming
dc.contributor.author Uhl, David
dc.contributor.author Keo, Sam
dc.date.accessioned 2009-03-09T17:13:15Z
dc.date.available 2009-03-09T17:13:15Z
dc.date.issued 2004-05-31
dc.identifier.citation 16th International Conference on Indium Phosphide, Kagoshima, Japan, May 31 - June 4. 2004. en_US
dc.identifier.clearanceno 03-2979
dc.identifier.uri http://hdl.handle.net/2014/41125
dc.description.abstract InAsSb quantum-dot lasers near 2 pm were demonstrated in cw operation at room temperature with a threshold current density of 733 A,/cm², output power of 3 mW/facet and a differential quantum efficiency of 13%. en_US
dc.description.sponsorship NASA/JPL en_US
dc.language.iso en_US en_US
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2005. en_US
dc.subject quantum dot en_US
dc.subject semi conductor lasers en_US
dc.title 2 μn InAsSb quantum-dot lasers en_US
dc.type Preprint en_US


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