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  • Divsalar, Dariush; Jones, Christopher; Dolinar, Sam; Thorpe, Jeremy (Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2005., 2005-11-28)
    We propose several LDPC code constructions that simultaneously achieve good threshold and error floor performance. Minimum distance is shown to grow linearly with block size (similar to regular codes of variable degree at ...
  • Divsalar, Dariush; Dolinar, Sam; Jones, Christopher (Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2006., 2006-10-23)
    In this paper we design high rate protograph based LDPC codes suitable for binary erasure channels. To simplify the encoder and decoder implementation for high data rate transmission, the structure of codes are based on ...
  • Divsalar, Dariush; Jones, Christopher (Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2006., 2006-11-27)
    In this paper we present protograph codes with a small number of degree-3 nodes and one high degree node. The iterative decoding threshold for proposed rate 1/2 codes are lower, by about 0.2 dB, than the best known irregular ...
  • Tsurutani, B. T.; Smith, E.J.; Ho, C.M.; Murphy, N.; Arballo, J.M.; Mason, G.M.; Tan, L.C. (1993-12-06)
  • Rax, B.; Johnston, A.; Lee, C. (1998-07-20)
    Proton testing of linear circuits has identified devices where significantly more damage occurs at equivalent total dose levels with protons than tests with gamma rays.
  • Johnston, A. H.; Miyahira, T. F.; Rax, B. G. (2001-07-17)
    Damage from 50 MeV protons is investigated for several types of laser diodes with wavelengths from 650 to 1550 nm.
  • Irom, Farokh; Allen, Gregory R.; Edmonds, Larry D.; Rax, Bernard G. (Pasadena, CA: Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2016, 2016-09-19)
    This paper reports proton damage in LED and phototransistor of the Micropac 66179 optocoupler. Analysis of the test data reveals interesting information, such as the dependence of the transistor gain on irradiation and ...
  • Becker, Heidi N.; Johnston, Allan H. (Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2004, 2004-07-19)
    This paper has examined the effects of proton damage on two types of LEDs in the wavelength region above the silicon bandgap limit. Unlike AlGaAs LEDs, the optical power linearity in both types of devices changes ...
  • Johnston, A.; Rax, B. (1999-09-14)
    This paper discusses proton degradation of linear and digital optocouplers. One obvious way to harden optocoupler technologies is to select LEDs that are more resistant to displacement damage.
  • Johnston, A. H. (2002-04-30)
  • Johnston, A.; Rax, B.; Selva, L. (1999-07-12)
    The severe degradation of optocouplers in space has been shown to be mainly due to proton displacement damage in the light-emitting diodes that are used within the optocouplers.
  • Johnston, A. H. (2000-09-11)
    The effects of proton displacement damage on light-emitting diodes and laser diodes are discussed, comparing the radiation sensitivity of current technology devices with older devices for which data exists in the literature.
  • Feynman, Joan (1996)
    Many spacecraft anomalies are caused by positively charged high energy particles impinging on the vehicle and its component parts. Here we review the current knowledge of the interplanetary particle environment in the ...
  • Leon, R.; Swift, G.; Magness, B.; Taylor, W.; Tang, Y.; Wang, K.; Dowd, P.; Zhang, Y. (1999-10-26)
  • Park, J.; Lin, T.; Jones, E.; Gunapala, D.; Soli, G.; Wilson, B. (1993)
    This paper reports the results of a study of proton irradiation effects on heterostructures.
  • Jun, I.; Xapsos, M. A.; Messenger, S. R.; Burke, E. A.; Walters, R. J.; Summers, G. P.; Jordan, T. (2003-07-21)
    The proton induced NIEL for representative device materials are presented for the energy range between 1 keV to 1000 MeV.
  • Edmonds, L. (2000)
    Many papers have presented models for estimating proton SEU cross sections from heavy-ion test data, but all rigorous treatments to date are based on the sensitive volume (SV) model for charge collection.
  • Guertin, S.; Farmanesh, F.; Swift, G.; Miyahira, T. (2000-04-11)
  • Mahoney, W.; Varnell, L. (1998-09-14)