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Title: Room temperature continuous-wave operation of InAsSb quantum-dot lasers near 2 mu m based on (001) InP substrate
Authors: Qui, Y.
Uhl, D.
Keo, S.
Issue Date: Jan-2004
Citation: Applied physics letters, vol. 84, no. 2, pp. 263-265
Abstract: Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy.
Appears in Collections:JPL TRS 1992+

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