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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/7933
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| Title: | Room-temperature continuous operation of InAsSb quantum-dot lasers near 2 mu m based on (100) InP substrate |
| Authors: | Qui, Y.
Uhl, D.
Keo, S. |
| Issue Date: | 19-Nov-2003 |
| Citation: | Applied physics letters, v. 84, no. 2, pp. 263-265
USA |
| Abstract: | Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 mu m up to 25 degrees C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13 percent is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm***super2***. With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm/degrees C is measured, which is even lower than that caused by the refractive index change. |
| URI: | http://hdl.handle.net/2014/7933 |
| Appears in Collections: | JPL TRS 1992+
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