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Title: Room-temperature continuous operation of InAsSb quantum-dot lasers near 2 mu m based on (100) InP substrate
Authors: Qui, Y.
Uhl, D.
Keo, S.
Issue Date: 19-Nov-2003
Citation: Applied physics letters, v. 84, no. 2, pp. 263-265
Abstract: Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 mu m up to 25 degrees C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13 percent is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm***super2***. With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm/degrees C is measured, which is even lower than that caused by the refractive index change.
Appears in Collections:JPL TRS 1992+

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