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Title: Study of strain boundary conditions and GaAs buffer sizes in InGaAs quantum dots
Authors: Oyafuso, F.
Klimeck, G.
Boykin, T. B.
Bowen, R. C.
Allmen, P. von
Issue Date: 25-May-2003
Citation: International Workshop for Computational Electronics
Rome, Italy
Abstract: NEMO 3-D has been developed for the simulation of electronic structure in self-assembled InGaAs quantum dots on GaAs substrates. Typical self-assembled quantum dots in that material system contain about 0.5 to 1 million atoms. Effects of strain by the surrounding GaAs buffer modify the electronic structure inside the quantum dot significantly and a large GaAs buffer must be included in the strain and electronic structure.
Appears in Collections:JPL TRS 1992+

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