NASA Jet Propulsion Laboratory California Institute of Technology Follow this link to skip to the main content

BEACON eSpace at Jet Propulsion Laboratory >
JPL Technical Report Server >
JPL TRS 1992+ >

Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/7333

Title: Study of strain boundary conditions and GaAs buffer sizes in InGaAs quantum dots
Authors: Oyafuso, F.
Klimeck, G.
Boykin, T. B.
Bowen, R. C.
Allmen, P. von
Issue Date: 25-May-2003
Citation: International Workshop for Computational Electronics
Rome, Italy
Abstract: NEMO 3-D has been developed for the simulation of electronic structure in self-assembled InGaAs quantum dots on GaAs substrates. Typical self-assembled quantum dots in that material system contain about 0.5 to 1 million atoms. Effects of strain by the surrounding GaAs buffer modify the electronic structure inside the quantum dot significantly and a large GaAs buffer must be included in the strain and electronic structure.
URI: http://hdl.handle.net/2014/7333
Appears in Collections:JPL TRS 1992+

Files in This Item:

File SizeFormat
03-1113.pdf4.49 MBAdobe PDFView/Open

Items in DSpace are protected by copyright, but are furnished with U.S. government purpose use rights.

 

Privacy/Copyright Image Policy Beacon Home Contact Us
NASA Home Page + Div 27
+ JPL Space
Site last updated on December 5, 2014.
If you have any comments or suggestions for this web site, please e-mail Robert Powers.