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|Title: ||Study of strain boundary conditions and GaAs buffer sizes in InGaAs quantum dots|
|Authors: ||Oyafuso, F.|
Boykin, T. B.
Bowen, R. C.
Allmen, P. von
|Issue Date: ||25-May-2003 |
|Citation: ||International Workshop for Computational Electronics|
|Abstract: ||NEMO 3-D has been developed for the simulation of electronic structure in self-assembled InGaAs quantum dots on GaAs substrates. Typical self-assembled quantum dots in that material system contain about 0.5 to 1 million atoms. Effects of strain by the surrounding GaAs buffer modify the electronic structure inside the quantum dot significantly and a large GaAs buffer must be included in the strain and electronic structure.|
|Appears in Collections:||JPL TRS 1992+|
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