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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/7333
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| Title: | Study of strain boundary conditions and GaAs buffer sizes in InGaAs quantum dots |
| Authors: | Oyafuso, F.
Klimeck, G.
Boykin, T. B.
Bowen, R. C.
Allmen, P. von |
| Issue Date: | 25-May-2003 |
| Citation: | International Workshop for Computational Electronics
Rome, Italy |
| Abstract: | NEMO 3-D has been developed for the simulation of electronic structure in self-assembled InGaAs quantum dots on GaAs substrates. Typical self-assembled quantum dots in that material system contain about 0.5 to 1 million atoms. Effects of strain by the surrounding GaAs buffer modify the electronic structure inside the quantum dot significantly and a large GaAs buffer must be included in the strain and electronic structure. |
| URI: | http://hdl.handle.net/2014/7333 |
| Appears in Collections: | JPL TRS 1992+
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