|
BEACON eSpace at Jet Propulsion Laboratory >
JPL Technical Report Server >
JPL TRS 1992+ >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/42339
|
| Title: | InP HEMT integrated circuits for submillimeter wave radiometers in Earth remote sensing |
| Authors: | Deal, William R.
Chattopadhyay, Goutam |
| Keywords: | submilliteter wave
indium phosphide
High electron mobility transistor (HEMT) |
| Issue Date: | 17-Jun-2012 |
| Publisher: | Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2012. |
| Citation: | International Microwave Symposium, Montreal, Canada, June 17, 2012 |
| Abstract: | The operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers forearth remote sensing. Index Terms —Submillimeter |
| URI: | http://hdl.handle.net/2014/42339 |
| Appears in Collections: | JPL TRS 1992+
|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
|
