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Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/42339

Title: InP HEMT integrated circuits for submillimeter wave radiometers in Earth remote sensing
Authors: Deal, William R.
Chattopadhyay, Goutam
Keywords: submilliteter wave
indium phosphide
High electron mobility transistor (HEMT)
Issue Date: 17-Jun-2012
Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2012.
Citation: International Microwave Symposium, Montreal, Canada, June 17, 2012
Abstract: The operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers forearth remote sensing.
URI: http://hdl.handle.net/2014/42339
Appears in Collections:JPL TRS 1992+

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