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Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/42317

Title: Inductively coupled plasma etching for delineation of InAs/GaSb pixels
Authors: Nguyen, Jean
Gill, John
Rafol, Sir B.
Soibel, Alexander
Khoskhlagh, Arezou
Ting, David
Keo, Sam
Fisher, Anita
Luong, Edward
Liu, John
Mumolo, Jason
Gunapala, Sarath D.
Keywords: inductively coupled (ICP) plasma dry etching
superlattice detectors
long wavelength infrared
Focal Plane Arrays (FPA)
InAs/GaSb
Issue Date: 13-Aug-2012
Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2012.
Citation: SPIE Optics and Photonics 2012, San Diego, California, August 12-16,2012
Abstract: We developed 320x256 Complimentary Barrier Infrared (CBIRD) focal plane array (FPA) for long wave infrared (LWIR) imaging application. The FPA layers grown by molecular beam epitaxy (MBE) had 300 periods 1.9 µm thick absorber. The CBIRD arrays showed the mean dark current density of 2.2 x 10‐4 A/cm2, when 128 mV bias voltage was applied. The long wave cut off was observed at 8.8 μm at the 50 % peak and the maximum quantum efficiency was 54 % at 5.6 µm. The arrays had 81 % fill factor with 97 % operability with noise equivalent difference temperature (NEΔT) of 18.6 mK and a mean detectivity of D*=1.3 x 1011 Hz1/2/W.
URI: http://hdl.handle.net/2014/42317
Appears in Collections:JPL TRS 1992+

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