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|Title: ||Inductively coupled plasma etching for delineation of InAs/GaSb pixels|
|Authors: ||Nguyen, Jean|
Rafol, Sir B.
Gunapala, Sarath D.
|Keywords: ||inductively coupled (ICP) plasma dry etching|
long wavelength infrared
Focal Plane Arrays (FPA)
|Issue Date: ||13-Aug-2012 |
|Publisher: ||Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2012.|
|Citation: ||SPIE Optics and Photonics 2012, San Diego, California, August 12-16,2012|
|Abstract: ||We developed 320x256 Complimentary Barrier Infrared (CBIRD) focal plane array (FPA) for long wave infrared (LWIR) imaging application. The FPA layers grown by molecular beam epitaxy (MBE) had 300 periods 1.9 µm thick absorber. The CBIRD arrays showed the mean dark current density of 2.2 x 10‐4 A/cm2, when 128 mV bias voltage was applied. The long wave cut off was observed at 8.8 μm at the 50 % peak and the maximum quantum efficiency was 54 % at 5.6 µm. The arrays had 81 % fill factor with 97 % operability with noise equivalent difference temperature (NEΔT) of 18.6 mK and a mean detectivity of D*=1.3 x 1011 Hz1/2/W.|
|Appears in Collections:||JPL TRS 1992+|
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