NASA Jet Propulsion Laboratory California Institute of Technology Follow this link to skip to the main content

BEACON eSpace at Jet Propulsion Laboratory >
JPL Technical Report Server >
JPL TRS 1992+ >

Please use this identifier to cite or link to this item:

Title: Minority carrier lifetime and photoluminescence studies of antimony-based superlattices
Authors: Höglund, Linda
Soibel, Alexander
Ting, David Z.
Khoshakhlagh, Arezou
Hill, Cory J.
Gunapala, Sarath D.
Keywords: infrared
minority carrier lifetime
Issue Date: 13-Aug-2012
Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2012.
Citation: SPIE Optics and Photonics 2012, San Diego, California, August 12-16,2012
Abstract: In this paper, we have used the OMR technique to study the minority carrier lifetimes in three InAs/GaSb photoluminescence (PL) structures with different number of periods in the absorber: 300, 400 and 600 periods respectively. The feasibility of using a visible 643 nm laser source with short penetration depth for lifetime measurements was studied by comparing the achieved results to measurements performed on the same samples with a 1550 nm IR laser source, which penetrates much deeper into the sample. Despite the differences in excitation wavelengths and penetration depths, the results from both measurements were very similar. This indicates that the diffusion length is long enough to facilitate a homogeneous distribution of excess carriers in the material.
Appears in Collections:JPL TRS 1992+

Files in This Item:

File Description SizeFormat
12-3735.pdf928.9 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, but are furnished with U.S. government purpose use rights.


Privacy/Copyright Image Policy Beacon Home Contact Us
NASA Home Page + Div 27
+ JPL Space
Site last updated on December 5, 2014.
If you have any comments or suggestions for this web site, please e-mail Robert Powers.