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|Title: ||Minority carrier lifetime and photoluminescence studies of antimony-based superlattices|
|Authors: ||Höglund, Linda|
Ting, David Z.
Hill, Cory J.
Gunapala, Sarath D.
minority carrier lifetime
|Issue Date: ||13-Aug-2012 |
|Publisher: ||Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2012.|
|Citation: ||SPIE Optics and Photonics 2012, San Diego, California, August 12-16,2012|
|Abstract: ||In this paper, we have used the OMR technique to study the minority carrier lifetimes in three InAs/GaSb
photoluminescence (PL) structures with different number of periods in the absorber: 300, 400 and 600 periods respectively. The feasibility of using a visible 643 nm laser source with short penetration depth for lifetime measurements was studied by comparing the achieved results to measurements performed on the same samples with a 1550 nm IR laser source, which penetrates much deeper into the sample. Despite the differences in excitation wavelengths and penetration depths, the results from both measurements were very similar. This indicates that the diffusion length is long enough to facilitate a homogeneous distribution of excess carriers in the material.|
|Appears in Collections:||JPL TRS 1992+|
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