NASA Jet Propulsion Laboratory California Institute of Technology Follow this link to skip to the main content

BEACON eSpace at Jet Propulsion Laboratory >
JPL Technical Report Server >
JPL TRS 1992+ >

Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/42307

Title: Sub-kHz linewidth GaSb semiconductor diode lasers operating near 2 μm
Authors: Bagheri, Mahmood
Briggs, Ryan M.
Frez, Clifford
Ksendzov, Alexander
Forouhar, Siamak
Keywords: semiconductor diode laser
frequency noise measurements
single-longitudinal-mode DFB lasers
linewidth.
Issue Date: 7-Oct-2012
Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2012.
Citation: 23rd IEEE International Semiconductor Laser Conference (ISLC), San Diego, California, October 7 - 10 2012
Abstract: We report on the phase noise properties of DFB lasers operating near 2.0 μm. Measured noise spectra indicate intrinsic laser linewidths below 1 kHz. An effective linewidth of less than 200 kHz for 5 ms measurement times is estimated.
URI: http://hdl.handle.net/2014/42307
Appears in Collections:JPL TRS 1992+

Files in This Item:

File Description SizeFormat
12-1457.pdf607.13 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, but are furnished with U.S. government purpose use rights.

 

Privacy/Copyright Image Policy Beacon Home Contact Us
NASA Home Page + Div 27
+ JPL Space
Site last updated on December 5, 2014.
If you have any comments or suggestions for this web site, please e-mail Robert Powers.