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|Title: ||Sub-kHz linewidth GaSb semiconductor diode lasers operating near 2 μm|
|Authors: ||Bagheri, Mahmood|
Briggs, Ryan M.
|Keywords: ||semiconductor diode laser|
frequency noise measurements
single-longitudinal-mode DFB lasers
|Issue Date: ||7-Oct-2012 |
|Publisher: ||Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2012.|
|Citation: ||23rd IEEE International Semiconductor Laser Conference (ISLC), San Diego, California, October 7 - 10 2012|
|Abstract: ||We report on the phase noise properties of DFB lasers operating near 2.0 μm.
Measured noise spectra indicate intrinsic laser linewidths below 1 kHz. An effective linewidth of less than 200 kHz for 5 ms measurement times is estimated.|
|Appears in Collections:||JPL TRS 1992+|
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