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Title: Compact submillimeter-wave receivers made with semiconductor nano-fabrication technologies
Authors: Jung, C.
Thomas, B.
Lee, C.
Peralta, A.
Chattopadhyay, G.
Gill, J.
Cooper, K.
Mehdi, I.
Keywords: Silicon micromachining
deep-reactive ion etching
surface roughness
receiver front-ends
Issue Date: 25-Apr-2011
Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2011.
Citation: IEEE International Microwave Symposium, Baltimore, Maryland, April 25, 2011.
Abstract: Advanced semiconductor nanofabrication techniques are utilized to design, fabricate and demonstrate a super-compact, low-mass (<10 grams) submillimeter-wave heterodyne front-end. RF elements such as waveguides and channels are fabricated in a silicon wafer substrate using deepreactive ion etching (DRIE). Etched patterns with sidewalls angles controlled with 1° precision are reported, while maintaining a surface roughness of better than 20 nm rms for the etched structures. This approach is being developed to build compact 2-D imaging arrays in the THz frequency range.
Appears in Collections:JPL TRS 1992+

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