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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/42297
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| Title: | Compact submillimeter-wave receivers made with semiconductor nano-fabrication technologies |
| Authors: | Jung, C.
Thomas, B.
Lee, C.
Peralta, A.
Chattopadhyay, G.
Gill, J.
Cooper, K.
Mehdi, I. |
| Keywords: | Silicon micromachining
nanotechnologies
deep-reactive ion etching
surface roughness
super-compact
receiver front-ends |
| Issue Date: | 25-Apr-2011 |
| Publisher: | Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2011. |
| Citation: | IEEE International Microwave Symposium, Baltimore, Maryland, April 25, 2011. |
| Abstract: | Advanced semiconductor nanofabrication techniques are utilized to design, fabricate and demonstrate a
super-compact, low-mass (<10 grams) submillimeter-wave heterodyne front-end. RF elements such as waveguides and channels are fabricated in a silicon wafer substrate using deepreactive ion etching (DRIE). Etched patterns with sidewalls angles controlled with 1° precision are reported, while
maintaining a surface roughness of better than 20 nm rms for the etched structures. This approach is being developed to build compact 2-D imaging arrays in the THz frequency range. |
| URI: | http://hdl.handle.net/2014/42297 |
| Appears in Collections: | JPL TRS 1992+
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