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Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/42290

Title: Growth and characteristics of type-II InAs/GaSb superlattice-based detectors
Authors: Khoshakhlagh, A.
Soibel, A.
Ting, D. Z.
Höglund, L.
Nguyen, J.
Keo, S. A.
Liao, A.
Gunapala, S. D.
Keywords: Unipolar barrier
infrared detectors
superlattice
long-wave
Issue Date: 21-Aug-2011
Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2011.
Citation: SPIE Optics and Photonics, San Diego, California, August 21-25, 2011
Abstract: We report on growth and device performance of infrared photodetectors based on type II InAs/Ga(In)Sb strain layer superlattices (SLs) using the complementary barrier infrared detector (CBIRD) design. The unipolar barriers on either side of the absorber in the CBIRD design in combination with the type-II InAs/GaSb superlattice material system are expected to outperform traditional III-V LWIR imaging technologies and offer significant advantages over the conventional II-VI material based FPAs. The innovative design of CBIRDS, low defect density material growth, and robust fabrication processes have resulted in the development of high performance long wave infrared (LWIR) focal plane arrays at JPL.
URI: http://hdl.handle.net/2014/42290
Appears in Collections:JPL TRS 1992+

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