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http://hdl.handle.net/2014/41964
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| Title: | Modeling the effects of hydrogen and dose rate sensitivity in CMOS and bipolar technologies |
| Authors: | Adell, Philippe
Sanchez, Ivan
Barnaby, Hugh |
| Keywords: | integrated circuits
hydrogen contamination
packaging
enhanced low dose
rate sensitivy |
| Issue Date: | Dec-2011 |
| Publisher: | Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2012. |
| Series/Report no.: | JPL Publication
11-17 |
| Abstract: | Low dose rate (LDR) and high dose rate (HDR) experiments on field-oxide-field-effect-transistors (FOXFETs) and gated lateral pnp (GLPNP) bipolar transistors indicate that there is a dose rate enhancement factor (EF) associated with radiation-induced degradation. This EF is also affect by the presence of hydrogen in the oxide.
In this work, we developed a one dimensional (1-D) numerical calculations code to investigate the key mechanisms that describe the dose rate sensitivity and the effect of hydrogen on dose rate effects. We used a finite-difference methodology for the numerical calculations that allow for computing solutions for the densities of the mobile species as well as for the electrostatic potential at nodes contained within a mesh superimposed on the solution domain. Results from calculations of damage EF indicate that oxide thickness, distribution of hole traps and hole capture cross-section affect dose rate sensitivity. In addition, calculations show that molecular hydrogen cracking at positively charged defects may be a key reaction relating hydrogen and dose rate response. Comparison to experimental data on bipolar and CMOS devices results in good agreement with the dose rate calculations of interface trap buildup |
| URI: | http://hdl.handle.net/2014/41964 |
| Appears in Collections: | JPL TRS 1992+
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