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|Title: ||Radiation tests of highly scaled, high-density, commercial, nonvolatile NAND flash memories— Update 2011 : NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance|
|Authors: ||Irom, Farokh|
Nguyen, Duc N.
|Keywords: ||Flash memory|
|Issue Date: ||Oct-2011 |
|Publisher: ||Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2011|
|Series/Report no.: ||JPL Publication|
|Abstract: ||High-density, commercial, nonvolatile flash memories with NAND architecture are now available from several manufacturers. This report examines SEE effects and TID response in single-level cell (SLC) 32Gb and multi-level cell (MLC) 64Gb NAND flash memories manufactured by Micron Technology.|
|Appears in Collections:||JPL TRS 1992+|
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