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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/41903
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| Title: | Investigation of the Semicoa SCF9550 and the International Rectifier IRHM57260SE for single-event gate rapture and single-event burnout : NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance |
| Authors: | Scheick, Leif |
| Keywords: | Single Event Gate Rupture
Power MOSFETs
Single Event Burnout, |
| Issue Date: | Sep-2011 |
| Publisher: | Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2011. |
| Series/Report no.: | JPL Publication
11-7 |
| Abstract: | Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. The
SCF9550 from Semicoa and the IRHM57260SE from International Rectifier were tested to NASA test condition
standards and requirements.
The IRHM57260SE performed much better when compared to previous testing. These initial results confirm that
parts from the Temecula line are marginally comparable to the El Segundo line. The SCF9550 from Semicoa was
also tested and represents the initial parts offering from this vendor. Both parts experienced single-event gate
rupture (SEGR) and single-event burnout (SEB). All of the SEGR was from gate to drain. |
| URI: | http://hdl.handle.net/2014/41903 |
| Appears in Collections: | JPL TRS 1992+
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