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Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/41903

Title: Investigation of the Semicoa SCF9550 and the International Rectifier IRHM57260SE for single-event gate rapture and single-event burnout : NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance
Authors: Scheick, Leif
Keywords: Single Event Gate Rupture
Power MOSFETs
Single Event Burnout,
Issue Date: Sep-2011
Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2011.
Series/Report no.: JPL Publication
11-7
Abstract: Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. The SCF9550 from Semicoa and the IRHM57260SE from International Rectifier were tested to NASA test condition standards and requirements. The IRHM57260SE performed much better when compared to previous testing. These initial results confirm that parts from the Temecula line are marginally comparable to the El Segundo line. The SCF9550 from Semicoa was also tested and represents the initial parts offering from this vendor. Both parts experienced single-event gate rupture (SEGR) and single-event burnout (SEB). All of the SEGR was from gate to drain.
URI: http://hdl.handle.net/2014/41903
Appears in Collections:JPL TRS 1992+

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