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Title: Radiation tests of highly scaled high density commercial nonvolatile NAND flash memories update 2009
Authors: Irom, Farokh
Nguyen, Duc N.
Keywords: Flash memory
heavy ions
single event
total dose
Issue Date: Sep-2009
Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2009.
Series/Report no.: JPL Publication
Abstract: Heavy ion single-event measurements on a variety of high density commercial NAND flash memories are reported. Three single event effect (SEE) phenomena are examined: single effect upsets (SEUs), single event functional interrupts (SEFIs), and catastrophic loss of ability to erase and program the device. Also, radiation results of multilevel flash technology are compared with results from single-level flash technology. These commercial high density memories appear to be much less susceptible to SEE and have better TID response compared to older generations of flash memories. The single-level devices are less sensitive to SEUs than multi-level devices. The charge pump in this study survived up to 600 krads. A new high current phenomenon in high density NAND flash memories is also discussed.
Appears in Collections:JPL TRS 1992+

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