NASA Jet Propulsion Laboratory California Institute of Technology Follow this link to skip to the main content

BEACON eSpace at Jet Propulsion Laboratory >
JPL Technical Report Server >
JPL TRS 1992+ >

Please use this identifier to cite or link to this item:

Title: Current leakage evolution in partially gate raptured power MOSFETs.
Authors: Scheick, Leif
Edmonds, Larry
Selva, Luis
Chen, Yuan
Keywords: avalanche breakdown
metal oxide semiconductor field-effect transistors (MOSFET)
single-event gate rupture (SEGR)
Issue Date: 19-Sep-2008
Publisher: IEEE
Citation: IEEE Transactions On Nuclear Science, Vol. 55, No. 4, August 2008, doi:10.1109/TNS.2008.2001008
Abstract: It has been observed that power MOSFETs can experience an SEGR and continue to function with altered parameters. We propose that there are three different types of SEGR modes; the micro-break, the thermal runaway, and the avalanche breakdown. Data that demonstrates these stages of device failure are presented as well as a proposed model for the micro-break. Brief discussions of the other modes, based on analysis combined with our interpretations of the older literature, are also given.
Appears in Collections:JPL TRS 1992+

Files in This Item:

File Description SizeFormat
06-1996.pdf232.32 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, but are furnished with U.S. government purpose use rights.


Privacy/Copyright Image Policy Beacon Home Contact Us
NASA Home Page + Div 27
+ JPL Space
Site last updated on December 5, 2014.
If you have any comments or suggestions for this web site, please e-mail Robert Powers.