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Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/41345

Title: Broadband characterization of a 100 to 180 GHz amplifier
Authors: Kangaslahti, P.
Deal, W. R.
Mei, X. B.
Lai, R.
Keywords: high electron mobility transistors (HEMTs)
indium phosphide
millimeter wave field-effect transistor (PET) amplifiers
Issue Date: 1-Mar-2007
Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2007.
Citation: IEEE Aerospace Conference, Big Sky, Montana, March 1-8, 2007.
Abstract: Atmospheric science and weather forecasting require measurements of the temperature and humidity vs. altitude. These sounding measurements are obtained at frequencies close to the resonance frequencies of oxygen (118 GHz) and water (183 GHz) molecules. We have characterized a broadband amplifier that will increase the sensitivity of sounding and other instruments at these frequencies. This study demonstrated for the first t1me continuous low noise amplification from 100 to 180 GHz. The measured InP monolithic milimeter-wave Integrated curcuit (MMIC) amplifier had more than 18 dB of gain from 100 to 180 GHz and 15 dB of gain up to 220 GHz. This is the widest bandwidth low noise amplifier result at these frequencies to date. The circut was fabricated in Northrop Grumman Corporation 35 nm InP high electron mobility transistor (HEMT) process.
URI: http://hdl.handle.net/2014/41345
Appears in Collections:JPL TRS 1992+

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