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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/41125
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| Title: | 2 μn InAsSb quantum-dot lasers |
| Authors: | Qiu, Yueming
Uhl, David
Keo, Sam |
| Keywords: | quantum dot
semi conductor lasers |
| Issue Date: | 31-May-2004 |
| Publisher: | Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2005. |
| Citation: | 16th International Conference on Indium Phosphide, Kagoshima, Japan, May 31 - June 4. 2004. |
| Abstract: | InAsSb quantum-dot lasers near 2 pm were demonstrated in cw operation at room temperature with a threshold current density of 733 A,/cm², output power of 3 mW/facet and a differential quantum efficiency of 13%. |
| URI: | http://hdl.handle.net/2014/41125 |
| Appears in Collections: | JPL TRS 1992+
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