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Title: 2 μn InAsSb quantum-dot lasers
Authors: Qiu, Yueming
Uhl, David
Keo, Sam
Keywords: quantum dot
semi conductor lasers
Issue Date: 31-May-2004
Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2005.
Citation: 16th International Conference on Indium Phosphide, Kagoshima, Japan, May 31 - June 4. 2004.
Abstract: InAsSb quantum-dot lasers near 2 pm were demonstrated in cw operation at room temperature with a threshold current density of 733 A,/cm², output power of 3 mW/facet and a differential quantum efficiency of 13%.
Appears in Collections:JPL TRS 1992+

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