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|Title: ||Dark current degradation of near infrared avalanche photodiodes from proton irradiation|
|Authors: ||Becker, Heidi N.|
Johnston, Allan H.
|Keywords: ||proton effects|
|Issue Date: ||6-Dec-2004 |
|Publisher: ||Dark current degradation of near infrared avalanche photodiodes from proton irradiation|
|Citation: ||IEEE Transactions On Nuclear Science, Vol. 51, No. 6, December 2004, doi:10.1109/TNS.2004.839165|
|Abstract: ||InGaAs and Ge avalanche photodiodes (APDs) are examined for the effects of 63-MeV protons on dark current. Dark current increases were large and similar to prior results for silicon APDs, despite the smaller size of InGaAs and Ge devices. Bulk dark current increases from displacement damage in the depletion regions appeared to be the dominant contributor to overall dark current degradation. Differences in displacement damage factors are discussed as they relate to structural and material differences between devices.|
|Appears in Collections:||JPL TRS 1992+|
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