NASA Jet Propulsion Laboratory California Institute of Technology Follow this link to skip to the main content

BEACON eSpace at Jet Propulsion Laboratory >
JPL Technical Report Server >
JPL TRS 1992+ >

Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/41121

Title: Dark current degradation of near infrared avalanche photodiodes from proton irradiation
Authors: Becker, Heidi N.
Johnston, Allan H.
Keywords: proton effects
optical receivers
indium compounds
elemental semiconductors
Issue Date: 6-Dec-2004
Publisher: Dark current degradation of near infrared avalanche photodiodes from proton irradiation
Citation: IEEE Transactions On Nuclear Science, Vol. 51, No. 6, December 2004, doi:10.1109/TNS.2004.839165
Abstract: InGaAs and Ge avalanche photodiodes (APDs) are examined for the effects of 63-MeV protons on dark current. Dark current increases were large and similar to prior results for silicon APDs, despite the smaller size of InGaAs and Ge devices. Bulk dark current increases from displacement damage in the depletion regions appeared to be the dominant contributor to overall dark current degradation. Differences in displacement damage factors are discussed as they relate to structural and material differences between devices.
URI: http://hdl.handle.net/2014/41121
Appears in Collections:JPL TRS 1992+

Files in This Item:

File Description SizeFormat
04-2838.pdf218.49 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, but are furnished with U.S. government purpose use rights.

 

Privacy/Copyright Image Policy Beacon Home Contact Us
NASA Home Page + Div 27
+ JPL Space
Site last updated on November 15, 2012.
If you have any comments or suggestions for this web site, please e-mail Alexander Smith or call 4-4202.