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Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/41115

Title: Demonstration of a Sub-Millimeter Wave Integrated Circuit (S-MMIC) using InP HEMT with a 35-nm Gate
Authors: Deal, W. R.
Din, S.
Padilla, J.
Radisic, V.
Mei, G.
Yoshida, W.
Liu, P.S.
Uyeda, J.
Barsky, M.
Gaier, T.
Fung, A.
Samoska, Lorene A.
Lai, R.
Keywords: lownoise amplifier (LNA)
high-electron-mobility transistor (HEMT)
monolithic microwave integrated circuit (MMIC)
S-MMIC
millimeter - wave
sub-mil
Issue Date: 12-Nov-2006
Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2006.
Citation: IEEE Compound Semiconductor Integrated Circuits (CSIC) Symposium, San Antonio, Texas, November 12, 2006.
Abstract: In this paper, we present two single stage MMIC amplifiers with the first demonstrating a measured S21 gain of 3-dB at 280-GHz and the second demonstrating 2.5-dB gain at 300- GHz, which is the threshold of the sub-millimeter wave regime. The high-frequency operation is enabled by a high-speed InP HEMT with a 35-nm gate. This is the first demonstrated S21 gain at sub-millimeter wave frequencies in a MMIC.
URI: http://hdl.handle.net/2014/41115
Appears in Collections:JPL TRS 1992+

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