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|Title: ||Air - bridge and vertical CNT switches for high performance switching applications|
|Authors: ||Kaul, Anupama B.|
Wong, Eric W.
Bronikowski, Michael J.
Hunt, BBrian D.
|Keywords: ||Carbon nanotube (CNT) switches|
nanoelectromechanical systems (NEMS) devices
|Issue Date: ||17-Apr-2006 |
|Publisher: ||Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2006.|
|Citation: ||Materials Research Society, Spring Meeting, San Francisco, California, April 17-21, 2006.|
|Abstract: ||Carbon nanotubes are attractive for switching applications since electrostatically-actuated CNT switches have low actuation voltages and power requirements, while allowing GHz switching speeds that stem from the inherently high elastic modulus and low mass of the CNT.
Our first NEM structure, the air-bridge switch, consists of suspended single-walled nanotubes (SWNTs) that lie above a sputtered Nb base electrode, where contact to the CNTs is made using evaporated Au/Ti. Electrical measurements of these air-bridge devices show well-defined ON and OFF states as a dc bias of a few volts is applied between the CNT and the Nb-base electrode. The CNT air-bridge switches were measured to have switching times down to a few nanoseconds. Our second NEM structure, the vertical CNT switch, consists of nanotubes grown perpendicular to the substrate. Vertical multi-walled nanotubes (MWNTs) are grown directly on a heavily doped Si substrate, from 200 - 300 nm wide, ~ 1 µm deep nano-pockets, with Nb metal electrodes to result in the formation of a vertical single-pole-double-throw switch architecture|
|Appears in Collections:||JPL TRS 1992+|
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