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Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/41021

Title: First on-wafer power characterization of MMIC Amplifiers at sub-millimeter wave frequencies
Authors: Fung, A. K.
Gaier, T.
Samoska, L.
Deal, W. R.
Radisic, V.
Mei, X. B.
Yoshida, W.
Liu, P. S.
Uyeda, J.
Barsky, M.
Lai, R.
Keywords: amplifier
monolithic microwave integrated circircuit
MM-Wave
power measurement
Issue Date: 6-Jun-2008
Publisher: IEEE
Citation: IEEE Microwave and Wireless Components Letters, Vol. 18, No. 6, June 2008 doi : 10.1109/LMWC.2008.922713
Abstract: Recent developments in semiconductor technology have enabled advanced submillimeter wave ( 300 GHz) transistors and circuits. These new high speed components have required new test methods to be developed for characterizing performance, and to provide data for device modeling to improve designs. Current efforts in progressing high frequency testing have resulted in on-wafer -parameter measurements up to approximately 340 GHz and swept frequency vector network analyzer waveguide measurements to 508 GHz. On-wafer noise figure measurements in the 270–340 GHz band have been demonstrated. In this letter we report on on-wafer power measurements at 330 GHz of a three stage amplifier that resulted in a maximum measured output power of 1.78mW and maximum gain of 7.1 dB. The method utilized demonstrates the extension of traditional power measurement techniques to submillimeter wave frequencies, and is suitable for automated testing without packaging for production screening of submillimeter wave circuits.
URI: http://hdl.handle.net/2014/41021
Appears in Collections:JPL TRS 1992+

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