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|Title: ||640 x 512 pixels long-wavelength infrared (LWIR) quantum-dot infrared photodetector (QDIP) imaging focal plane array|
|Authors: ||Gunapala, Sarath D.|
Bandara, Sumith V.
Hill, Cory J.
Ting, David Z.
Liu, John K.
Rafol, Sir B.
Blazejewski, Edward R.
Mumolo, Jason M.
Keo, Sam A.
Shott, Craig A.
|Keywords: ||focal plane array|
quantum dots (QDs)
|Issue Date: ||3-Mar-2007 |
|Publisher: ||IEEE-Inst Electrical Electronics Engineers Inc|
|Citation: ||Ieee Journal Of Quantum Electronics, Vol. 43, No. 3, March 2007, doi:10.1109/JQE.2006.889645|
|Abstract: ||Epitaxially grown self-assembled. InAs-InGaAs-GaAs quantum dots (QDs) are exploited for the development of large-format long-wavelength infrared focal plane arrays (FPAs). The dot-in-a-well (DWELL) structures were experimentally shown to absorb both 45 degrees and normal incident light, therefore, a reflection grating structure was used to enhance the quantum efficiency. The devices exhibit peak responsivity out to 8.1 mu m, with peak detectivity reaching similar to 1 X 10(10) Jones at 77 K. The devices were fabricated into the first long-wavelength 640 x 512 pixel QD infrared photodetector imaging FPA, which has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60-K operating temperature.|
|Appears in Collections:||JPL TRS 1992+|
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