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http://hdl.handle.net/2014/40854
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| Title: | IR DirectFET extreme environments evaluation final report |
| Authors: | Burmeister, Martin
Mottiwala, Amin |
| Keywords: | metal oxide semiconductor field effect transistor (MOSFET)
electronic parts packaging |
| Issue Date: | Jun-2008 |
| Publisher: | Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2008. |
| Series/Report no.: | JPL Publication
08-23 |
| Abstract: | In 2007, International Rectifier (IR) introduced a new version of its DirectFET metal oxide semiconductor field effect transistor (MOSFET) packaging. The new version (referred to as “Version 2”) enhances device moisture resistance, makes surface mount (SMT) assembly of these devices to printed wiring boards (PWBs) more repeatable, and subsequent assembly inspection simpler. In the present study, the National Aeronautics Space Administration (NASA) Jet Propulsion Laboratory (JPL), in collaboration with Stellar Microelectronics (Stellar), continued an evaluation of the DirectFET that they started together in 2006. The present study focused on comparing the two versions of the DirectFET and examining the suitability of the DirectFET devices for space applications. This study evaluated both versions of two DirectFET packaged devices that had both been shown in the 2006 study to have the best electrical and thermal properties: the IRF6635 and IRF6644. The present study evaluated (1) the relative electrical and thermal performance of both versions of each device, (2) the performance through high reliability testing, and (3) the performance of these devices in combination with a range of alternate solder alloys in the extreme thermal environments of deep space.... |
| URI: | http://hdl.handle.net/2014/40854 |
| Appears in Collections: | JPL TRS 1992+
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