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http://hdl.handle.net/2014/40809
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| Title: | Radiation effects assessment of MRAM devices |
| Authors: | Elghefari, Mohamed
McClure, Steve |
| Keywords: | Magneto-resistive Random Access Memory (MRAM)
Single Event Effects (SEE) |
| Issue Date: | May-2008 |
| Publisher: | Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2008. |
| Series/Report no.: | JPL Publication
08-19 |
| Abstract: | The Magneto-resistive Random Access Memory (MRAM) from Freescale Semiconductor, MR2A16A, was subjected to heavy ion single event testing. Test results show that this device is sensitive to Single Event Latchup (SEL). The sensitivity of the MRAM was attributed to the complementary metal oxide semiconductor (CMOS) process in which the active portion of this device is constructed. Therefore, the device must be used with caution and may require mitigation techniques if used in a space environment. There was no indication that the MRAM technology itself, the memory element construction, is subject to damage from heavy ions. |
| URI: | http://hdl.handle.net/2014/40809 |
| Appears in Collections: | JPL TRS 1992+
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