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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/40764
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| Title: | Testing guideline for single event gate rupture (SEGR) of power MOSFETs |
| Authors: | Scheick, Leif |
| Keywords: | radiation testing |
| Issue Date: | Feb-2008 |
| Publisher: | Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2008. |
| Series/Report no.: | JPL Publication
08-10 |
| Abstract: | The purpose of this document is two-fold. First, the document lists and discusses many of the issues important to understand when testing power MOSFETs. Second, the recommended approach for using radiation test data to define the device application requirements is presented. These include SEE rate calculation, data analysis, and derating guidelines. A significant amount of work has been done on the basic effects of SEB and SEGR. References are supplied where seminal work has been done on the topic at hand. The reader is urged to review the references if the testing issues or mission application at hand are complex. |
| URI: | http://hdl.handle.net/2014/40764 |
| Appears in Collections: | JPL TRS 1992+
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