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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/40260
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| Title: | Frequency dependence of single-event upset in highly advanced powerpc microprocessors |
| Authors: | Irom, Farokh
Farmanesh, Farhad
White, Mark
Kouba, Coy K. |
| Keywords: | Cyclotron
single event upset
heavy ions
microprocessors
silicon on insulators
single event effects
single event transient, |
| Issue Date: | 1-Sep-2006 |
| Publisher: | Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2006. |
| Citation: | IEEE Transaction on Nuclear Science, RADECS 2006 Workshop, Athens, Greece, September 01, 2006 |
| Abstract: | Single-event upset effects from heavy ions were measured for Motorola silicon-on-insulator (SOI) microprocessor with 90 nm feature sizes at three frequencies of 500, 1066 and 1600 MHz. Frequency dependence of single-event upsets is discussed. The results of our studies suggest the single-event upset in registers and D-Cache tend to increase with frequency. This might have important implications for the overall single-event upset trend as technology moves toward higher frequencies |
| URI: | http://hdl.handle.net/2014/40260 |
| Appears in Collections: | JPL TRS 1992+
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