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Title: Frequency dependence of single-event upset in highly advanced powerpc microprocessors
Authors: Irom, Farokh
Farmanesh, Farhad
White, Mark
Kouba, Coy K.
Keywords: Cyclotron
single event upset
heavy ions
silicon on insulators
single event effects
single event transient,
Issue Date: 1-Sep-2006
Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2006.
Citation: IEEE Transaction on Nuclear Science, RADECS 2006 Workshop, Athens, Greece, September 01, 2006
Abstract: Single-event upset effects from heavy ions were measured for Motorola silicon-on-insulator (SOI) microprocessor with 90 nm feature sizes at three frequencies of 500, 1066 and 1600 MHz. Frequency dependence of single-event upsets is discussed. The results of our studies suggest the single-event upset in registers and D-Cache tend to increase with frequency. This might have important implications for the overall single-event upset trend as technology moves toward higher frequencies
Appears in Collections:JPL TRS 1992+

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