NASA Jet Propulsion Laboratory California Institute of Technology Follow this link to skip to the main content

BEACON eSpace at Jet Propulsion Laboratory >
JPL Technical Report Server >
JPL TRS 1992+ >

Please use this identifier to cite or link to this item:

Title: The effect of integration of strontium-bismuth-tantalate capacitors onto SOI wafers.
Authors: Strauss, Karl F.
Joshi, Vikram
Ohno, Morifumo
Ida, Jiro
Nagatomo, Yoshiki
Keywords: SOI
Issue Date: 4-Mar-2006
Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2006.
Citation: IEEE Aerospace Conference, Big Sky, Montana, March 4-11, 2006.
Abstract: We report for the first time the successful integration of Strontium-Bismuth-Tantalate ferroelectric capacitors on an SOI Substrate. We have verified that the unique processing requirements of SBT capacitors does not affect the properties of the surrounding FD-SOI transistors, and, conversely, we have verified that the SOI processing does not affect the quality of the SBT capacitors.
Appears in Collections:JPL TRS 1992+

Files in This Item:

File Description SizeFormat
05-3341.pdf672.88 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, but are furnished with U.S. government purpose use rights.


Privacy/Copyright Image Policy Beacon Home Contact Us
NASA Home Page + Div 27
+ JPL Space
Site last updated on December 5, 2014.
If you have any comments or suggestions for this web site, please e-mail Robert Powers.