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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/40094
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| Title: | The effect of integration of strontium-bismuth-tantalate capacitors onto SOI wafers. |
| Authors: | Strauss, Karl F.
Joshi, Vikram
Ohno, Morifumo
Ida, Jiro
Nagatomo, Yoshiki |
| Keywords: | SOI
Ferro-electric
memory
non-volatile |
| Issue Date: | 4-Mar-2006 |
| Publisher: | Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2006. |
| Citation: | IEEE Aerospace Conference, Big Sky, Montana, March 4-11, 2006. |
| Abstract: | We report for the first time the successful integration of Strontium-Bismuth-Tantalate ferroelectric capacitors on an SOI Substrate. We have verified that the unique processing requirements of SBT capacitors does not affect the properties of the surrounding FD-SOI transistors, and, conversely, we have verified that the SOI processing does not affect the quality of the SBT capacitors. |
| URI: | http://hdl.handle.net/2014/40094 |
| Appears in Collections: | JPL TRS 1992+
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