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Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/40094

Title: The effect of integration of strontium-bismuth-tantalate capacitors onto SOI wafers.
Authors: Strauss, Karl F.
Joshi, Vikram
Ohno, Morifumo
Ida, Jiro
Nagatomo, Yoshiki
Keywords: SOI
Ferro-electric
memory
non-volatile
Issue Date: 4-Mar-2006
Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2006.
Citation: IEEE Aerospace Conference, Big Sky, Montana, March 4-11, 2006.
Abstract: We report for the first time the successful integration of Strontium-Bismuth-Tantalate ferroelectric capacitors on an SOI Substrate. We have verified that the unique processing requirements of SBT capacitors does not affect the properties of the surrounding FD-SOI transistors, and, conversely, we have verified that the SOI processing does not affect the quality of the SBT capacitors.
URI: http://hdl.handle.net/2014/40094
Appears in Collections:JPL TRS 1992+

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