BEACON eSpace at Jet Propulsion Laboratory >
JPL Technical Report Server >
JPL TRS 1992+ >
Please use this identifier to cite or link to this item:
|Title: ||A radiation - tolerant, low - power non - volatile memory based on silicon nanocrystal quantum dots.|
|Authors: ||Bell, L. D.|
Brongersma, M. L.
Flagad, R. C.
Atwater, H. A.
Green, M. L.
|Keywords: ||non-volatile memory|
|Issue Date: ||21-Feb-2001 |
|Publisher: ||Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2001.|
|Citation: ||Forum on Innovative Approaches to Outer Planet Exploration 2001-2020, Houston, Texas, February 21, 2001.|
|Abstract: ||Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in Si02 is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few- or single-electron storage in a small number of nanocrystal elements. In addition, the nanocrystal layer fabrication technique should be simple, 8-inch wafer compatible and well controlled.|
|Appears in Collections:||JPL TRS 1992+|
Items in DSpace are protected by copyright, but are furnished with U.S. government purpose use rights.