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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/39583
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| Title: | A radiation - tolerant, low - power non - volatile memory based on silicon nanocrystal quantum dots. |
| Authors: | Bell, L. D.
Boer, E.
Ostraat, M.
Brongersma, M. L.
Flagad, R. C.
Atwater, H. A.
deBlauwe, J.
Green, M. L. |
| Keywords: | non-volatile memory
single electronics
nanocrystals |
| Issue Date: | 21-Feb-2001 |
| Publisher: | Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2001. |
| Citation: | Forum on Innovative Approaches to Outer Planet Exploration 2001-2020, Houston, Texas, February 21, 2001. |
| Abstract: | Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in Si02 is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few- or single-electron storage in a small number of nanocrystal elements. In addition, the nanocrystal layer fabrication technique should be simple, 8-inch wafer compatible and well controlled. |
| URI: | http://hdl.handle.net/2014/39583 |
| Appears in Collections: | JPL TRS 1992+
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