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Title: Beyond G-band : a 235 GHz InP MMIC amplifier
Authors: Dawson, Douglas
Samoska, Lorene
Fung, A. K.
Lee, Karen
Lai, Richard
Grundbacher, Ronald
Liu, Po-Hsin
Raja, Rohit
Keywords: G - band
high electron mobility transistors (HEMTs)
indium phosphide
millimeter wave field-effect transistor (FET) amplifiers
monolithic millimeter-wave integrated circuits (MMICs)
WR3 waveguide
Issue Date: Dec-2005
Publisher: IEEE
Citation: IEEE Microwave and Wireless Components Letters, Vol. 15, NO 12, December 2005, doi 10.1109/LMWC.2005.859984
Abstract: We present results on an InP monolithic millimeter- wave integrated circuit (MMIC) amplifier having 10-dB gain at 235 GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology’s (NGST) 0.07- m InP high electron mobility transistor (HEMT) process. Using a WR3 (220–325 GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for -parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230 GHz
Appears in Collections:JPL TRS 1992+

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