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|Title: ||Common base amplifier with 7 - dB gain at 176 GHz in InP mesa DHBT technology|
|Authors: ||Samoska, Lorene|
Rodell, M. J. W.
|Keywords: ||MMIC amplifier|
InP heterojunction bipolar transitor.
|Issue Date: ||6-Jun-2004 |
|Publisher: ||Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2004.|
|Citation: ||IEEE Radio Frequency Integrated Circuit Symposium, Fort Worth, Texas, June 06, 2004.|
|Abstract: ||We report a single stage tunded amplifier that exhibits 7 dB small signal gain at 176 GHz. Common Base topology is chosen as it has the best maximum stable gain (MSG) in this frequency band when compared to common emitter and common collector topologies. The amplifiers are designed and fabricated in InP mesa double heterojunction bipolar transistor (DHBT) technology.|
|Appears in Collections:||JPL TRS 1992+|
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