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Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/38985

Title: T-shaped emitter metal heterojunction bipolar transistors for submillimeter wave applications.
Authors: Fung, Andy
Samoska, Lorene
Velebir, Jim
Siege, Peter
Rodwell, Mark
Paidi, Vamsi
Griffth, Zach
Urteaga, Miguel
Malik, Roger
Keywords: transistor
submillimeter
THz
heterojunction bipolar transistors (HBT)
Issue Date: 27-Apr-2004
Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2004.
Citation: 15 th International Symposium on Space Terahertz Technology, Northampton, Massachusetts, April 27-29, 2004.
Abstract: We report on the development of submillimeter wave transistors at JPL. The goal of the effort is to produce advance-reliable high frequency and high power amplifiers, voltage controlled oscillators, active multipliers, and high-speed mixed-signal circuits for space borne applications. The technology in development to achieve this is based on the Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT). The HBT is well suited for high speed, high power and uniform (across wafer) performance, due to the ability to tailor the material structure that electrons traverse through by well-controlled epitaxial growth methods. InP with its compatible lattice matched alloys such as indium gallium arsenide (InGaAs) and indium aluminium arsenide (InAlAs) provides for high electron velocities and high voltage breakdown capabilities. The epitaxial methods for this material system are fairly mature, however the implementation of high performance and reliable transistors are still under development by many laboratories. Our most recently fabricated, second generation mesa HBTs at JPL have extrapolated current gain cutoff frequency (FJ of 142GHz and power gain cutoff frequency (Fm,) of approximately 160GHz. This represents a 13% and 33% improvement of Ft and F, respectively, compared to the first generation mesa HBTs [l]. Analysis based on the University of California, Santa Barbara (UCSB) device model, RF device characteristics can be significantly improved by reducing base contact resistance and base metal contact width. We will describe our effort towards increasing transistor performance and yield.
URI: http://hdl.handle.net/2014/38985
Appears in Collections:JPL TRS 1992+

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