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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/38444
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| Title: | Proton damage in LEDs with wavelengths above the
silicon wavelength cutoff |
| Authors: | Becker, Heidi N.
Johnston, Allan H. |
| Keywords: | LED
protons
AlGaAs
GaAs
long wavelength |
| Issue Date: | 19-Jul-2004 |
| Publisher: | Pasadena, CA : Jet Propulsion Laboratory, National
Aeronautics and Space Administration, 2004 |
| Citation: | IEEE Nuclear & Space Radiation Effects Conference, Atlanta, GA, July 19, 2004. |
| Abstract: | This paper has examined the effects of proton
damage on two types of LEDs in the wavelength
region above the silicon bandgap limit. Unlike
AlGaAs LEDs, the optical power linearity in both
types of devices changes significantly after
irradiation. This may be caused by the lower
heterojunction barriers associated with these
materials. |
| URI: | http://hdl.handle.net/2014/38444 |
| Appears in Collections: | JPL TRS 1992+
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