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Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/38342

Title: Indium phosphide double heterojunction bipolar transistors with T-shaped emitter metal features having cutoff frequencies in excess of 200 GHz
Authors: Fung, A. K.
Samoska, L.
Velebir, J.
Siegel, P.
Rodwell, M.
Paidi, V.
Griffith, Z.
Malik, R.
Keywords: transistors
submillimeter
THz
HBT
Issue Date: Oct-2005
Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2005.
Citation: State-of-the-Art Programs on Compound Semiconductors XLIII, Los Angeles, CA, Oct. 16-21, 2005
Abstract: We demonstrate Indium Phosphide Double Heterojunction Bipolar Transistors with simultaneous cutoff frequency Fmax of 288 GHz and current gain cutoff frequency Ft of 251 GHz.
URI: http://hdl.handle.net/2014/38342
Appears in Collections:JPL TRS 1992+

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