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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/38342
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| Title: | Indium phosphide double heterojunction bipolar transistors with T-shaped emitter metal features having cutoff frequencies in excess of 200 GHz |
| Authors: | Fung, A. K.
Samoska, L.
Velebir, J.
Siegel, P.
Rodwell, M.
Paidi, V.
Griffith, Z.
Malik, R. |
| Keywords: | transistors
submillimeter
THz
HBT |
| Issue Date: | Oct-2005 |
| Publisher: | Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2005. |
| Citation: | State-of-the-Art Programs on Compound Semiconductors XLIII, Los Angeles, CA, Oct. 16-21, 2005 |
| Abstract: | We demonstrate Indium Phosphide Double Heterojunction Bipolar Transistors with simultaneous cutoff frequency Fmax of 288 GHz and current gain cutoff frequency Ft of 251 GHz. |
| URI: | http://hdl.handle.net/2014/38342 |
| Appears in Collections: | JPL TRS 1992+
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