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|Title: ||GaN-based micro pressure sensor for extreme environments|
|Authors: ||Son, K.-A.|
Ruden, P. P.
|Issue Date: ||Oct-2005 |
|Publisher: ||Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2005.|
|Citation: ||IEEE Sensors 2005, Irvine, CA, October 31 - November 4, 2005|
|Abstract: ||The linearity and reversibility in pressure response suggest that these newly investigated n-GaN/AlxGa(1-x)N/n-GaN devices are promising candidates for high-pressure sensor applications.|
|Appears in Collections:||JPL TRS 1992+|
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