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Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/37990

Title: The effect of the strain relaxation in InAs/GaAs stacked quantum dots and multiple quantum wells on the Raman spectrum
Authors: Lazarenkova, Olga L.
von Allmen, Paul
Lee, Seungwon
Oyafuso, Fabiano
Klimeck, Gerhard
Keywords: phonons
quantum dots
quantum wells
atomistic level simulation
Issue Date: Jun-2004
Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2004.
Citation: 12th International Symposium: Nanostructures, Physics and Technology, St. Petersburg, Russia, June 21-25, 2004
Abstract: Atomistic-level simulations of the Raman shift in InAs/GaAs multiple quantum well (MQW) and stacked quantum dot (SQD) structures as a function of interlayer separation are reporter.
URI: http://hdl.handle.net/2014/37990
Appears in Collections:JPL TRS 1992+

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