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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/37990
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| Title: | The effect of the strain relaxation in InAs/GaAs stacked quantum dots and multiple quantum wells on the Raman spectrum |
| Authors: | Lazarenkova, Olga L.
von Allmen, Paul
Lee, Seungwon
Oyafuso, Fabiano
Klimeck, Gerhard |
| Keywords: | phonons
quantum dots
quantum wells
atomistic level simulation |
| Issue Date: | Jun-2004 |
| Publisher: | Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2004. |
| Citation: | 12th International Symposium: Nanostructures, Physics and Technology, St. Petersburg, Russia, June 21-25, 2004 |
| Abstract: | Atomistic-level simulations of the Raman shift in InAs/GaAs multiple quantum well (MQW) and stacked quantum dot (SQD) structures as a function of interlayer separation are reporter. |
| URI: | http://hdl.handle.net/2014/37990 |
| Appears in Collections: | JPL TRS 1992+
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