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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/37883
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| Title: | Common base amplifier with 7-dB gain at 176 GHz in InP mesa DHBT technology |
| Authors: | Paidi, V.
Griffith, Z.
Wei, Y.
Dahlstrom, M.
Parthasarathy, N.
Urteaga, M.
Rodwell, M. J. W. |
| Keywords: | MMIC amplifiers
millimeter-wave amplifier
InP heterojunction bipolar transistor |
| Issue Date: | Jun-2004 |
| Publisher: | Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2004. |
| Citation: | IEEE Radio Frequency Integrated Circuit Symposium 2004, Ft. Worth, TX, June 6, 2004 |
| Abstract: | We report common base power amplifiers designed for 140-220 GHz frequency band in InP mesa double heterojunction bipolar transistor (DHBT) technology. |
| URI: | http://hdl.handle.net/2014/37883 |
| Appears in Collections: | JPL TRS 1992+
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