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Title: Common base amplifier with 7-dB gain at 176 GHz in InP mesa DHBT technology
Authors: Paidi, V.
Griffith, Z.
Wei, Y.
Dahlstrom, M.
Parthasarathy, N.
Urteaga, M.
Rodwell, M. J. W.
Keywords: MMIC amplifiers
millimeter-wave amplifier
InP heterojunction bipolar transistor
Issue Date: Jun-2004
Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2004.
Citation: IEEE Radio Frequency Integrated Circuit Symposium 2004, Ft. Worth, TX, June 6, 2004
Abstract: We report common base power amplifiers designed for 140-220 GHz frequency band in InP mesa double heterojunction bipolar transistor (DHBT) technology.
Appears in Collections:JPL TRS 1992+

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