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Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/37717

Title: The effect of integration of Strontium-Bismuth-Tantalate capacitors onto SOI wafers
Authors: Joshi, Vikram
Ohno, Morifumo
Ida, Jiro
Nagatomo, Yoshiki
Strauss, Karl
Keywords: SOI
silicon-on-insulator
ferroelectric
Issue Date: Oct-2005
Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2005.
Citation: 2005 International SOI Conference, Honolulu, HI, October 3-6, 2005
Abstract: We report for the first time the successful integration of Strontium-Bismuth-Tantalate ferroelectric capacitors on an SOI Substrate. We have verified that the unique processing requirements of SBT capacitors does not affect the properties of the surrounding FD-SOI transistors, and, conversely, we have verified that the SOI processing does not affect the quality of the SBT capacitors.
URI: http://hdl.handle.net/2014/37717
Appears in Collections:JPL TRS 1992+

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