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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/37717
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| Title: | The effect of integration of Strontium-Bismuth-Tantalate capacitors onto SOI wafers |
| Authors: | Joshi, Vikram
Ohno, Morifumo
Ida, Jiro
Nagatomo, Yoshiki
Strauss, Karl |
| Keywords: | SOI
silicon-on-insulator
ferroelectric |
| Issue Date: | Oct-2005 |
| Publisher: | Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2005. |
| Citation: | 2005 International SOI Conference, Honolulu, HI, October 3-6, 2005 |
| Abstract: | We report for the first time the successful integration of Strontium-Bismuth-Tantalate ferroelectric capacitors on an SOI Substrate. We have verified that the unique processing requirements of SBT capacitors does not affect the properties of the surrounding FD-SOI transistors, and, conversely, we have verified that the SOI processing does not affect the quality of the SBT capacitors. |
| URI: | http://hdl.handle.net/2014/37717 |
| Appears in Collections: | JPL TRS 1992+
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