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Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/37685

Title: Evidence for reduction of noise and radiation effects in G4-FET depletion-all-around operation
Authors: Mojarradi, M.
Akarvardar, K.
Cristoloveanu, S.
Schrimpf, R. D.
Blalock, B. J.
Dufrene, B.
Gentil, P.
Chroboczek, J. A.
Keywords: SOI CMOS
radiation
G4-FET
Issue Date: Sep-2005
Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2005.
Citation: European Solid-State Device Research Conference ESSDERC, Grenoble, France, September 12-16, 2005
Abstract: The low noise and radiation-hard operation of the SOI Four-Gate transistor (G4-FET) is eperimentally demonstrated.
URI: http://hdl.handle.net/2014/37685
Appears in Collections:JPL TRS 1992+

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