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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/37252
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| Title: | Lasing characteristics of InAs quantum dot laers on InP substrate |
| Authors: | Yang, Y.
Qiu, D.
Uhl, R.
Chacon, R. |
| Issue Date: | 2003 |
| Citation: | Applied Physics Letters |
| Abstract: | Single-stack InAs self-assembled quantum dots (QD) lasers based on InP substrate have been grown by metalorganic vapor phase epitaxy. The narrow ridge waveguide lasers lased up to 260 K in continuous wave operation, and near room temperature in pulsed mode, with wavelengths between 1.59 to 1.74 mu m. |
| URI: | http://hdl.handle.net/2014/37252 |
| Appears in Collections: | JPL TRS 1992+
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