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Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/37252

Title: Lasing characteristics of InAs quantum dot laers on InP substrate
Authors: Yang, Y.
Qiu, D.
Uhl, R.
Chacon, R.
Issue Date: 2003
Citation: Applied Physics Letters
Abstract: Single-stack InAs self-assembled quantum dots (QD) lasers based on InP substrate have been grown by metalorganic vapor phase epitaxy. The narrow ridge waveguide lasers lased up to 260 K in continuous wave operation, and near room temperature in pulsed mode, with wavelengths between 1.59 to 1.74 mu m.
URI: http://hdl.handle.net/2014/37252
Appears in Collections:JPL TRS 1992+

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