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|Title: ||Tailorable Doping-Spike PtSi Infrared Detectors Fabricated by Si Molecular Beam Epitaxy|
|Authors: ||Lin, T.|
Park, J. S.
Gunapala. S. D.
Jones, E. W.
del Castillo, H. M.
|Issue Date: ||1993 |
|Citation: ||1993 International Conference on Solid State Devices and Materials|
Japan Journal of Applied Physics
|Abstract: ||By incorporating a 1-nm-thick p+ doping spike at the PtSi/Si interface, we have successfullydemonstrated extended cutoff wavelengths of PtSi Schottky infrared detectors. The extended cutoffwavelengths resulted from the reduced effective potential barriers due to the combined effects of anincreased electric field near the silicide/Si interface and the Schottky image force. The p+ dopingspikes were grown by molecular beam epitaxy at 450 degrees C using elemental boron as the dopantsource, with doping concentrations ranging from 5 x 10^(19) to 2 x 10^(20) cm^(-3). The cutoffwavelengths were shown to increase with increasing doping concentrations of the p+ spikes. Thermionic emission dark current characteristics were observed and photoresponse in the LWIRregime was demonstrated. Furthermore, the effective potential barriers determined by the Richardsonplots were used to study the electrically activated boron dopant concentrations of the thin (1-nm-thick) spikes.|
|Appears in Collections:||JPL TRS 1992+|
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