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Title: 16 Micrometer Infrared Hot Electron Transistor
Authors: Gunapala, S.D.
Liu, J.K.
Park, J.S.
Lin, T.L.
Issue Date: Sep-1993
Citation: NATO Advanced Research Workshop, Intersubband Physics
Whistler, Canada
Abstract: We have demonstrated a bound to continuum state GaAs/Al_xGa_(1-x)As infrared hot electron transistor which has a peak response at theta_p = 16.3 micrometers. An excellent photo-current transfer ratio of alpha_p = 0.12 and very low dark current transfer ratio of alpha_d = 7.2x10^(-5) is achieved at a temperature of T = 60 K.
Appears in Collections:JPL TRS 1992+

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