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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/35941
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| Title: | 16 Micrometer Infrared Hot Electron Transistor |
| Authors: | Gunapala, S.D.
Liu, J.K.
Park, J.S.
Lin, T.L. |
| Issue Date: | Sep-1993 |
| Citation: | NATO Advanced Research Workshop, Intersubband Physics
Whistler, Canada |
| Abstract: | We have demonstrated a bound to continuum state GaAs/Al_xGa_(1-x)As infrared hot electron transistor which has a peak response at theta_p = 16.3 micrometers. An excellent photo-current transfer ratio of alpha_p = 0.12 and very low dark current transfer ratio of alpha_d = 7.2x10^(-5) is achieved at a temperature of T = 60 K. |
| URI: | http://hdl.handle.net/2014/35941 |
| Appears in Collections: | JPL TRS 1992+
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