NASA Jet Propulsion Laboratory California Institute of Technology Follow this link to skip to the main content

BEACON eSpace at Jet Propulsion Laboratory >
JPL Technical Report Server >
JPL TRS 1992+ >

Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/35884

Title: Ballistic Electron Emission Microscopy of Metal/Group IV Interfaces
Authors: Hecht, M. H.
Kaiser, W. J.
Bell, L. D.
Fathauer, R.
Manion, S. J.
Issue Date: Nov-1993
Citation: Materials Research Society
Boston, MA
Abstract: Ballistic electron emission microscopy and spectroscopy, together with related techniques, have been applied with great success to the study of buried interfaces. These probes, known collectively as BEEM, have yielded important information on interface transport, interface band structure, and carrier scattering, with lateral spatial resolution on the nanometer scale. Recent applications of the technique to polycrystalline metal/semiconductor interfaces have demonstrated an ability to spatially map both conduction band and valence band semiconductor structure. BEEM studies of epitaxial silicide/silicon interfaces have been particularly fruitful, as the rich silicide band structure results in complex and often surprising transport behavior...
URI: http://hdl.handle.net/2014/35884
Appears in Collections:JPL TRS 1992+

Files in This Item:

File SizeFormat
93-1613.pdf93.7 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, but are furnished with U.S. government purpose use rights.

 

Privacy/Copyright Image Policy Beacon Home Contact Us
NASA Home Page + Div 27
+ JPL Space
Site last updated on December 5, 2014.
If you have any comments or suggestions for this web site, please e-mail Robert Powers.