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|Title: ||Ballistic Electron Emission Microscopy of Metal/Group IV Interfaces|
|Authors: ||Hecht, M. H.|
Kaiser, W. J.
Bell, L. D.
Manion, S. J.
|Issue Date: ||Nov-1993 |
|Citation: ||Materials Research Society|
|Abstract: ||Ballistic electron emission microscopy and spectroscopy, together with related techniques, have been applied with great success to the study of buried interfaces. These probes, known collectively as BEEM, have yielded important information on interface transport, interface band structure, and carrier scattering, with lateral spatial resolution on the nanometer scale. Recent applications of the technique to polycrystalline metal/semiconductor interfaces have demonstrated an ability to spatially map both conduction band and valence band semiconductor structure. BEEM studies of epitaxial silicide/silicon interfaces have been particularly fruitful, as the rich silicide band structure results in complex and often surprising transport behavior...|
|Appears in Collections:||JPL TRS 1992+|
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