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Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/35722

Title: Electron Mobility Studies of Device Quality InAs/GaAs Short Period Supprlattices Grown by Dynamic Stoichiometry Control and Floating In Flash-off Methods
Authors: Grunthaner, F. J.
George, T.
Zang, D. P.
Lewis, J.
Griffen, J.
Tang, X.
Liu, J. K.
Pike, W. T.
Spencer, M. G.
Issue Date: 23-Aug-1993
Citation: Garmisch-Partenkirchen, Germany
Abstract: The Strained Layer InGaAs/GaAs system has been the subject of substantial work emphasizing both growth studies and device applications. Relatively few studies have successfully explored the binary InAs on GaAs system because of the difficulties of maintaining a specular growth front and the apparently small value of the critical thickness.
URI: http://hdl.handle.net/2014/35722
Appears in Collections:JPL TRS 1992+

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