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Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/35710

Title: Ballistic-Electron-Emission Microscopy Techniques for Nanometer-scale Characterization of Interfaces
Authors: Bell, L.D.
Grunthaner, F.J.
Hecht, M.H.
Manion, S.J.
Milliken, A.M.
Kaiser, W.J.
Issue Date: 1993
Citation: Encyclopedia of Advanced Materials
Abstract: Semiconductor interface properties are among the most important phenomena in materials science and technology. The study of metal/semiconductor Schottky barrier interfaces has been the primary focus of a large research and development community for decades. Throughout the long history of interface investigation, the study of interface defect electronic properties have been seriously hindered by the fundamental experimental difficulty of probing subsurface structures. A new method, Ballistic-Electron-Emission Microscopy (BEEM), has been developed which not only enables spectroscopic probing of subsurface interface properties, but also, provides nanometer-resolution imaging capabilities. BEEM employs Scanning Tunneling Microscopy (STM) and a unique spatially localized ballistic electron spectroscopy method...
URI: http://hdl.handle.net/2014/35710
Appears in Collections:JPL TRS 1992+

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