NASA Jet Propulsion Laboratory California Institute of Technology Follow this link to skip to the main content

BEACON eSpace at Jet Propulsion Laboratory >
JPL Technical Report Server >
JPL TRS 1992+ >

Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/35559

Title: Ru<sub>2</sub>Ge<sub>3</sub>: Crystal Growth and Come Properties
Authors: Borshchevsky, A.
Fleurial, J-P.
Issue Date: Aug-1993
Citation: Caltimore, Maryland, USA
Abstract: Large samples of Ru<sub>2</sub>Ge<sub>3</sub> were grown from Ge-rich off-stoichiometric melts at a temperature close to 1460*C by a vertical gradient freeze method in graphite and glassy carbon crucibles.
URI: http://hdl.handle.net/2014/35559
Appears in Collections:JPL TRS 1992+

Files in This Item:

File SizeFormat
93-1270.pdf417.08 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, but are furnished with U.S. government purpose use rights.

 

Privacy/Copyright Image Policy Beacon Home Contact Us
NASA Home Page + Div 27
+ JPL Space
Site last updated on November 15, 2012.
If you have any comments or suggestions for this web site, please e-mail Alexander Smith or call 4-4202.