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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/34457
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| Title: | Ballistic-Electron-Emission Microscopy of Strained Si<sub>l-x</sub>Ge<sub>x</sub> Layers |
| Authors: | Milliken, A. M.
Bell, L. D.
Manion, S. J.
Kaiser, W. J.
Fathauer, R. W.
Pike, W. T. |
| Issue Date: | 1994 |
| Abstract: | Ballistic-electron-emission microscopy has been used to investigate the effects of strain on Si<sub>l-x</sub>Ge<sub>x</sub> alloys. Lifting of the degeneracy of the conduction-band minimum of SiGe due to lattice deformation has been directly measured by application of BEEM spectroscopy to Ag/Si structures. |
| URI: | http://hdl.handle.net/2014/34457 |
| Appears in Collections: | JPL TRS 1992+
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