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Title: Ballistic-Electron-Emission Microscopy of Strained Si<sub>l-x</sub>Ge<sub>x</sub> Layers
Authors: Milliken, A. M.
Bell, L. D.
Manion, S. J.
Kaiser, W. J.
Fathauer, R. W.
Pike, W. T.
Issue Date: 1994
Abstract: Ballistic-electron-emission microscopy has been used to investigate the effects of strain on Si<sub>l-x</sub>Ge<sub>x</sub> alloys. Lifting of the degeneracy of the conduction-band minimum of SiGe due to lattice deformation has been directly measured by application of BEEM spectroscopy to Ag/Si structures.
Appears in Collections:JPL TRS 1992+

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