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Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/33843

Title: GaAs JFETS Intended for Deep Cryogenic VLWIR Readout Electronics
Authors: Cunningham, T.
Fossum, E.
Issue Date: 29-Jun-1994
Citation: Grenoble, France
Abstract: This paper presents the structure and fabrication of GaAs JFETSs and their performance at 4 K.
URI: http://hdl.handle.net/2014/33843
Appears in Collections:JPL TRS 1992+

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