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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2014/33843
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| Title: | GaAs JFETS Intended for Deep Cryogenic VLWIR Readout Electronics |
| Authors: | Cunningham, T.
Fossum, E. |
| Issue Date: | 29-Jun-1994 |
| Citation: | Grenoble, France |
| Abstract: | This paper presents the structure and fabrication of GaAs JFETSs and their performance at 4 K. |
| URI: | http://hdl.handle.net/2014/33843 |
| Appears in Collections: | JPL TRS 1992+
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