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Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/33472

Title: (abstract) All Epitaxial Edge-geometry SNS Devices with Doped PBCO and YBCO Normal Layers
Authors: Barner, J.B.
Hunt, B.D.
Foote, M.C.
Issue Date: Apr-1995
Citation: San Francisco, CA
Abstract: We will present our results on tapered-edge-geometry SNS weak link fabricated from c-axis oriented base-, counterelectrode and normal layers using a variety of processing conditions. To date, we have employed a variety of different normal materials (Co-doped YBCO, Y-doped PBCO, Ca-doped PBCO). We have been examining the junction fabrication process in detail and we will present our methods. In particular, we have been examining both epitaxial and non-epitaxial milling mask overlayers and we will present a comparison of both methods. These devices behave similar to the expectations of the resisively shunted junction model and conventional SNS proximity effect models but with some differences which will be discussed. We will present the detailed systematics of our junctions including device parameters versus temperature, rf and dc magnetic response for the various processing conditions.
URI: http://hdl.handle.net/2014/33472
Appears in Collections:JPL TRS 1992+

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