NASA Jet Propulsion Laboratory California Institute of Technology Follow this link to skip to the main content

BEACON eSpace at Jet Propulsion Laboratory >
JPL Technical Report Server >
JPL TRS 1992+ >

Please use this identifier to cite or link to this item: http://hdl.handle.net/2014/33363

Title: PV Technology for Low Intensity, Low Temperature (LILT) Applications
Authors: Stella, Paul M.
Pool, Frederick S.
Nicolet, Marc A.
Iles, Peter A.
Issue Date: 5-Dec-1994
Citation: Waikoloa, Hawaii
Abstract: As a result of the recent NASA emphasis on smaller, lower cost space missions, PV is now being considered for a number of missions operating at solar distances of 3 AU or greater. In the past, many of these missions would utilize an RTG (radioisotope thermoelectric generator). Historically, silicon solar cell behavior at these distances has been compromised by a number of mechanisms including shunting, nonohmic back contacts, and the "broken knee" curve shape. The former two can usually be neglected for modern silicon cells, but the latter has not been eliminated. This problem has been identified with localized diffusion at the top contact/silicon interface which leads to structural changes at the local junction. This is believed to create a resistive metal-semiconductor-like (MSL) interface in parallel with the junction which results in the characteristic forms of the LILT (low intensity, low temperature) "broken knee". This paper discusses a TaSiN contact barrier that will prevent the MSL structure in the junction.
URI: http://hdl.handle.net/2014/33363
Appears in Collections:JPL TRS 1992+

Files in This Item:

File SizeFormat
94-1530.pdf322.12 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, but are furnished with U.S. government purpose use rights.

 

Privacy/Copyright Image Policy Beacon Home Contact Us
NASA Home Page + Div 27
+ JPL Space
Site last updated on November 15, 2012.
If you have any comments or suggestions for this web site, please e-mail Alexander Smith or call 4-4202.