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|Title: ||PV Technology for Low Intensity, Low Temperature (LILT) Applications|
|Authors: ||Stella, Paul M.|
Pool, Frederick S.
Nicolet, Marc A.
Iles, Peter A.
|Issue Date: ||5-Dec-1994 |
|Citation: ||Waikoloa, Hawaii|
|Abstract: ||As a result of the recent NASA emphasis on smaller, lower cost space missions, PV is now being considered for a number of missions operating at solar distances of 3 AU or greater. In the past, many of these missions would utilize an RTG (radioisotope thermoelectric generator). Historically, silicon solar cell behavior at these distances has been compromised by a number of mechanisms including shunting, nonohmic back contacts, and the "broken knee" curve shape. The former two can usually be neglected for modern silicon cells, but the latter has not been eliminated. This problem has been identified with localized diffusion at the top contact/silicon interface which leads to structural changes at the local junction. This is believed to create a resistive metal-semiconductor-like (MSL) interface in parallel with the junction which results in the characteristic forms of the LILT (low intensity, low temperature) "broken knee". This paper discusses a TaSiN contact barrier that will prevent the MSL structure in the junction.|
|Appears in Collections:||JPL TRS 1992+|
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